Infineon IPD Type N-Channel MOSFET, 50 A, 80 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 2500 units)*

R 16 422,50

(exc. VAT)

R 18 885,00

(inc. VAT)

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  • 7,500 unit(s) ready to ship from another location
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Units
Per unit
Per Reel*
2500 - 2500R 6.569R 16,422.50
5000 - 5000R 6.405R 16,012.50
7500 +R 6.213R 15,532.50

*price indicative

RS stock no.:
229-1831
Mfr. Part No.:
IPD50N08S413ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

80V

Package Type

TO-252

Series

IPD

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

13.2mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

19nC

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

72W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Height

2.3mm

Standards/Approvals

No

Length

6.5mm

Width

6.22 mm

Automotive Standard

AEC-Q101

The Infineon n channel MOSFET has 175°C operating temperature and 100 percent avalanche tested.

It is RoHS compliant and AEC Q101 qualified

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