Infineon IPD Type N-Channel MOSFET, 60 A, 100 V Enhancement, 3-Pin TO-252 IPD60N10S412ATMA1

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Subtotal (1 pack of 2 units)*

R 60,78

(exc. VAT)

R 69,90

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8R 30.39R 60.78
10 - 98R 29.63R 59.26
100 - 248R 28.74R 57.48
250 - 498R 27.59R 55.18
500 +R 26.485R 52.97

*price indicative

Packaging Options:
RS stock no.:
258-3849
Mfr. Part No.:
IPD60N10S412ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-252

Series

IPD

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

12.2mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

26nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

94W

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon OptiMOS-T2 power-transistor is P-channel normal level enhancement mode. It has 175°C operating temperature.

AEC qualified

MSL1 up to 260°C peak reflow

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