Infineon IPD Type N-Channel MOSFET, 50 A, 80 V Enhancement, 3-Pin TO-252 IPD50N08S413ATMA1

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Subtotal (1 pack of 15 units)*

R 301,965

(exc. VAT)

R 347,265

(inc. VAT)

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Units
Per unit
Per Pack*
15 - 15R 20.131R 301.97
30 - 75R 19.628R 294.42
90 - 225R 19.039R 285.59
240 - 465R 18.278R 274.17
480 +R 17.547R 263.21

*price indicative

Packaging Options:
RS stock no.:
229-1833
Mfr. Part No.:
IPD50N08S413ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

80V

Package Type

TO-252

Series

IPD

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

13.2mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

72W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

19nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

6.22 mm

Height

2.3mm

Length

6.5mm

Automotive Standard

AEC-Q101

The Infineon n channel MOSFET has 175°C operating temperature and 100 percent avalanche tested.

It is RoHS compliant and AEC Q101 qualified

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