Infineon IPD Type N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-252 IPD079N06L3GATMA1

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Subtotal (1 reel of 2500 units)*

R 20 480,00

(exc. VAT)

R 23 552,50

(inc. VAT)

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Units
Per unit
Per Reel*
2500 +R 8.192R 20,480.00

*price indicative

RS stock no.:
273-3003
Mfr. Part No.:
IPD079N06L3GATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

60V

Series

IPD

Package Type

TO-252

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

7.9mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

50nC

Maximum Operating Temperature

175°C

Length

10.48mm

Height

6.223mm

Width

6.731 mm

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon power MOSFET is a perfect choice for synchronous rectification in switched mode power supplies such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications

Highest system efficiency

Less paralleling required

Increased power density

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