Infineon IPD N-Channel MOSFET, 80 A, 75 V Enhancement, 3-Pin TO-252 IPD90N03S4L03ATMA1

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Subtotal (1 pack of 2 units)*

R 81,30

(exc. VAT)

R 93,50

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8R 40.65R 81.30
10 - 98R 39.635R 79.27
100 - 248R 38.445R 76.89
250 - 498R 36.905R 73.81
500 +R 35.43R 70.86

*price indicative

Packaging Options:
RS stock no.:
249-6911
Mfr. Part No.:
IPD90N03S4L03ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

75V

Package Type

TO-252

Series

IPD

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.7mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

80nC

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

81W

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon OptiMOS is power MOSFET for automotive applications. Operating channel is N. It is AEC Q101 qualified. MSL1 up to 260°C peak reflow. Green Product (RoHS compliant) and it is 100% Avalanche tested.

175°C operating temperature

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