Infineon IPD Type N-Channel MOSFET, 14.7 A, 600 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 2500 units)*

R 22 832,50

(exc. VAT)

R 26 257,50

(inc. VAT)

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  • 2,500 unit(s) ready to ship from another location
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Units
Per unit
Per Reel*
2500 - 2500R 9.133R 22,832.50
5000 - 5000R 8.905R 22,262.50
7500 +R 8.638R 21,595.00

*price indicative

RS stock no.:
217-2525
Mfr. Part No.:
IPD60R400CEAUMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

14.7A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-252

Series

IPD

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

400mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-40°C

Typical Gate Charge Qg @ Vgs

9.4nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.9V

Maximum Power Dissipation Pd

41W

Maximum Operating Temperature

150°C

Height

2.41mm

Width

6.22 mm

Length

6.73mm

Standards/Approvals

No

Automotive Standard

No

The Infineon CoolMOS™ CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS™ CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets.

Narrow margins between typical and max R DS(on)

Reduced energy stored in output capacitance (E oss)

Good body diode ruggedness and reduced reverse recovery charge (Q rr)

Optimized integrated R g

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