Infineon CoolGaN Type N-Channel MOSFET, 12.5 A, 600 V Enhancement, 8-Pin HSOF IGT60R190D1SATMA1
- RS stock no.:
- 222-4638
- Mfr. Part No.:
- IGT60R190D1SATMA1
- Manufacturer:
- Infineon
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View bulk pricing optionSubtotal (1 unit)*
R 314,69
(exc. VAT)
R 361,89
(inc. VAT)
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- Shipping from 25 April 2028
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Units | Per unit |
|---|---|
| 1 - 9 | R 314.69 |
| 10 - 99 | R 306.82 |
| 100 - 249 | R 297.62 |
| 250 - 499 | R 285.72 |
| 500 + | R 274.29 |
*price indicative
- RS stock no.:
- 222-4638
- Mfr. Part No.:
- IGT60R190D1SATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12.5A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | HSOF | |
| Series | CoolGaN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 190mΩ | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12.5A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type HSOF | ||
Series CoolGaN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 190mΩ | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon design of Cool MOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. Cool MOS™ P6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.
Increased MOSFET dv/dt ruggedness
Extremely low losses due to very low FOM Rdson*Qg and Eoss
Very high commutation ruggedness
Pb-free plating Halogen free mold compound
Related links
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