Infineon IPT60R Type N-Channel MOSFET, 75 A, 600 V Enhancement, 8-Pin HSOF
- RS stock no.:
- 222-4937
- Mfr. Part No.:
- IPT60R028G7XTMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 reel of 2000 units)*
R 323 268,00
(exc. VAT)
R 371 758,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 04 January 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2000 - 2000 | R 161.634 | R 323,268.00 |
| 4000 - 4000 | R 157.593 | R 315,186.00 |
| 6000 + | R 152.865 | R 305,730.00 |
*price indicative
- RS stock no.:
- 222-4937
- Mfr. Part No.:
- IPT60R028G7XTMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 75A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | HSOF | |
| Series | IPT60R | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 28mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.8V | |
| Typical Gate Charge Qg @ Vgs | 123nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 391W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 2.4mm | |
| Length | 10.1mm | |
| Width | 10.58 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 75A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type HSOF | ||
Series IPT60R | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 28mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.8V | ||
Typical Gate Charge Qg @ Vgs 123nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 391W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 2.4mm | ||
Length 10.1mm | ||
Width 10.58 mm | ||
Automotive Standard No | ||
The Infineon CoolMOS™ C7 Gold superjunction MOSFET series (G7) brings together the benefits of the improved 600V CoolMOS™ C7 Gold technology, 4pin Kelvin source capability and the improved thermal properties of the TO-Leadless (TOLL) package to enable a possible SMD solution for high current hard switching topologies such as power factor correction (PFC) up to 3kW and for resonant circuits such as high end LLC.
Gives best-in-class FOM R DS(on)xE oss and R DS(on)xQ G
Enables best-in-class R DS(on) in smallest footprint
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