Infineon CoolMOS P7 N-Channel MOSFET, 44 A, 600 V Enhancement, 8-Pin HSOF IPT60R050G7XTMA1

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Subtotal (1 reel of 2000 units)*

R 168 460,00

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R 193 720,00

(inc. VAT)

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2000 - 2000R 84.23R 168,460.00-
4000 - 4000R 82.124R 164,248.00R 8 424,00
6000 +R 79.66R 159,320.00R 27 420,00

*price indicative

RS stock no.:
215-2555
Mfr. Part No.:
IPT60R050G7XTMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

44A

Maximum Drain Source Voltage Vds

600V

Package Type

HSOF

Series

CoolMOS P7

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

50mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

245W

Typical Gate Charge Qg @ Vgs

68nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

800mV

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Infineon Cool MOS™ C7 Gold super junction MOSFET series (G7) brings together the benefits of the improved 600V Cool MOS™ C7 Gold technology, 4pin Kelvin source capability and the improved thermal properties of the TO-Leadless (TOLL) package to enable a possible SMD solution for high current hard switching topologies such as power factor correction (PFC) up to 3kW and for resonant circuits such as high end LLC.

Gives best-in-class FOM R DS(on)xE oss and R DS(on)xQ G

Enables best-in-class R DS(on) in smallest footprint

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