Infineon CoolMOS P7 Type N-Channel MOSFET, 44 A, 600 V Enhancement, 8-Pin HSOF IPT60R050G7XTMA1

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Subtotal (1 pack of 2 units)*

R 307,56

(exc. VAT)

R 353,70

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8R 153.78R 307.56
10 - 98R 149.935R 299.87
100 - 248R 145.435R 290.87
250 - 498R 139.62R 279.24
500 +R 134.035R 268.07

*price indicative

Packaging Options:
RS stock no.:
215-2556
Mfr. Part No.:
IPT60R050G7XTMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

44A

Maximum Drain Source Voltage Vds

600V

Package Type

HSOF

Series

CoolMOS P7

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

50mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.8V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

245W

Typical Gate Charge Qg @ Vgs

68nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Infineon Cool MOS™ C7 Gold super junction MOSFET series (G7) brings together the benefits of the improved 600V Cool MOS™ C7 Gold technology, 4pin Kelvin source capability and the improved thermal properties of the TO-Leadless (TOLL) package to enable a possible SMD solution for high current hard switching topologies such as power factor correction (PFC) up to 3kW and for resonant circuits such as high end LLC.

Gives best-in-class FOM R DS(on)xE oss and R DS(on)xQ G

Enables best-in-class R DS(on) in smallest footprint

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