Infineon CoolMOS P7 Type N-Channel MOSFET, 44 A, 600 V Enhancement, 8-Pin HSOF IPT60R050G7XTMA1

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Subtotal (1 pack of 2 units)*

R 253,83

(exc. VAT)

R 291,904

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8R 126.915R 253.83
10 - 98R 123.74R 247.48
100 - 248R 120.03R 240.06
250 - 498R 115.23R 230.46
500 +R 110.62R 221.24

*price indicative

Packaging Options:
RS stock no.:
215-2556
Mfr. Part No.:
IPT60R050G7XTMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

44A

Maximum Drain Source Voltage Vds

600V

Series

CoolMOS P7

Package Type

HSOF

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

50mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.8V

Typical Gate Charge Qg @ Vgs

68nC

Maximum Power Dissipation Pd

245W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Infineon Cool MOS™ C7 Gold super junction MOSFET series (G7) brings together the benefits of the improved 600V Cool MOS™ C7 Gold technology, 4pin Kelvin source capability and the improved thermal properties of the TO-Leadless (TOLL) package to enable a possible SMD solution for high current hard switching topologies such as power factor correction (PFC) up to 3kW and for resonant circuits such as high end LLC.

Gives best-in-class FOM R DS(on)xE oss and R DS(on)xQ G

Enables best-in-class R DS(on) in smallest footprint

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