Infineon CoolGaN Type N-Channel MOSFET, 10 A, 600 V Enhancement, 8-Pin LSON

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Bulk discount available

Subtotal (1 reel of 3000 units)*

R 139 398,00

(exc. VAT)

R 160 308,00

(inc. VAT)

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Units
Per unit
Per Reel*
3000 - 3000R 46.466R 139,398.00
6000 - 6000R 45.305R 135,915.00
9000 +R 43.946R 131,838.00

*price indicative

RS stock no.:
232-0418
Mfr. Part No.:
IGLD60R190D1AUMA3
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

10A

Maximum Drain Source Voltage Vds

600V

Package Type

LSON

Series

CoolGaN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

190mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon 600V enhancement-mode power transistor offers fast turn-on and turn-off speed, minimum switching losses and enables simple half-bridge topologies with the highest efficiency. The gallium nitride CoolGaN 600V series is qualified according to a comprehensive GaN-tailored qualification well beyond existing standards. Its improves system efficiency, improves power density and enables higher operating frequency.

Ultrafast switching

No reverse-recovery charge

Capable of reverse conduction

Low gate charge, low output charge

Superior commutation ruggedness

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