Infineon CoolGaN Type N-Channel MOSFET, 10 A, 600 V Enhancement, 8-Pin LSON IGLD60R190D1AUMA3

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R 70,65

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R 81,25

(inc. VAT)

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1 - 9R 70.65
10 - 99R 68.88
100 - 249R 66.81
250 - 499R 64.14
500 +R 61.57

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Packaging Options:
RS stock no.:
232-0419
Mfr. Part No.:
IGLD60R190D1AUMA3
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

10A

Maximum Drain Source Voltage Vds

600V

Series

CoolGaN

Package Type

LSON

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

190mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon 600V enhancement-mode power transistor offers fast turn-on and turn-off speed, minimum switching losses and enables simple half-bridge topologies with the highest efficiency. The gallium nitride CoolGaN 600V series is qualified according to a comprehensive GaN-tailored qualification well beyond existing standards. Its improves system efficiency, improves power density and enables higher operating frequency.

Ultrafast switching

No reverse-recovery charge

Capable of reverse conduction

Low gate charge, low output charge

Superior commutation ruggedness

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