Infineon IPT60R Type N-Channel MOSFET, 29 A, 600 V Enhancement, 8-Pin HSOF IPT60R080G7XTMA1
- RS stock no.:
- 222-4940
- Mfr. Part No.:
- IPT60R080G7XTMA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 2 units)*
R 249,41
(exc. VAT)
R 286,822
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 1,982 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 124.705 | R 249.41 |
| 10 - 98 | R 121.585 | R 243.17 |
| 100 - 248 | R 117.935 | R 235.87 |
| 250 - 498 | R 113.22 | R 226.44 |
| 500 + | R 108.69 | R 217.38 |
*price indicative
- RS stock no.:
- 222-4940
- Mfr. Part No.:
- IPT60R080G7XTMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 29A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | HSOF | |
| Series | IPT60R | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 167W | |
| Forward Voltage Vf | 0.8V | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 10.58 mm | |
| Standards/Approvals | No | |
| Height | 2.4mm | |
| Length | 10.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 29A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type HSOF | ||
Series IPT60R | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 167W | ||
Forward Voltage Vf 0.8V | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 10.58 mm | ||
Standards/Approvals No | ||
Height 2.4mm | ||
Length 10.1mm | ||
Automotive Standard No | ||
The Infineon CoolMOS™ C7 Gold superjunction MOSFET series (G7) brings together the benefits of the improved 600V CoolMOS™ C7 Gold technology, 4pin Kelvin source capability and the improved thermal properties of the TO-Leadless (TOLL) package to enable a possible SMD solution for high current hard switching topologies such as power factor correction (PFC) up to 3kW and for resonant circuits such as high end LLC.
Gives best-in-class FOM R DS(on)xE oss and R DS(on)xQ G
Enables best-in-class R DS(on) in smallest footprint
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