Infineon OptiMOS Type P-Channel MOSFET & Diode, 90 A, 30 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 2500 units)*

R 29 517,50

(exc. VAT)

R 33 945,00

(inc. VAT)

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Units
Per unit
Per Reel*
2500 - 2500R 11.807R 29,517.50
5000 - 5000R 11.512R 28,780.00
7500 +R 11.166R 27,915.00

*price indicative

RS stock no.:
220-7415
Mfr. Part No.:
IPD90P03P4L04ATMA2
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET & Diode

Channel Type

Type P

Maximum Continuous Drain Current Id

90A

Maximum Drain Source Voltage Vds

30V

Series

OptiMOS

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

4.1mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

5 V

Forward Voltage Vf

-1.3V

Maximum Power Dissipation Pd

137W

Typical Gate Charge Qg @ Vgs

125nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

6.22 mm

Length

6.73mm

Height

2.41mm

Automotive Standard

AEC-Q101

The Infineon offers a wide portfolio of P-channel automotive power MOSFET in DPAK, D2PAK, TO220, TO262 and SO8 package with the technology of OptiMOS -P2 and Gen5.

P-channel - Logic Level - Enhancement mode

No charge pump required for high side drive.

Simple interface drive circuit

World's lowest RDSon at 40V

Highest current capability

Lowest switching and conduction power losses for highest thermal efficiency

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