Infineon CoolMOS CE Type N-Channel MOSFET, 7.2 A, 650 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 2500 units)*

R 13 650,00

(exc. VAT)

R 15 700,00

(inc. VAT)

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Temporarily out of stock
  • Shipping from 08 March 2027
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Units
Per unit
Per Reel*
2500 - 2500R 5.46R 13,650.00
5000 - 5000R 5.323R 13,307.50
7500 +R 5.164R 12,910.00

*price indicative

RS stock no.:
214-9044
Mfr. Part No.:
IPD65R1K0CEAUMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

7.2A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-252

Series

CoolMOS CE

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

Channel Mode

Enhancement

Maximum Power Dissipation Pd

68W

Typical Gate Charge Qg @ Vgs

15.3nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Height

2.41mm

Length

6.73mm

Standards/Approvals

No

Automotive Standard

No

The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching Super junction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.

Easy to use/drive

Very high commutation ruggedness

Qualified for standard grade applications

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