Infineon CoolMOS CE Type N-Channel MOSFET, 7.2 A, 650 V Enhancement, 3-Pin TO-251

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Subtotal (1 tube of 75 units)*

R 419,325

(exc. VAT)

R 482,25

(inc. VAT)

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In Stock
  • 1,425 unit(s) ready to ship from another location
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Units
Per unit
Per Tube*
75 - 150R 5.591R 419.33
225 - 300R 5.451R 408.83
375 +R 5.288R 396.60

*price indicative

RS stock no.:
214-9104
Mfr. Part No.:
IPS65R1K0CEAKMA2
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

7.2A

Maximum Drain Source Voltage Vds

650V

Series

CoolMOS CE

Package Type

TO-251

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

1Ω

Channel Mode

Enhancement

Forward Voltage Vf

0.9V

Typical Gate Charge Qg @ Vgs

15.3nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

37W

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Height

6.22mm

Standards/Approvals

No

Length

6.73mm

Width

2.4 mm

Automotive Standard

No

The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching Super junction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.

Easy to use/drive

Very high commutation ruggedness

Qualified for standard grade applications

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