N-Channel MOSFET, 6.8 A, 650 V, 3-Pin DPAK Infineon IPD60R1K0CEAUMA1

RS stock no.:: 130-0898
Mfr. Part No.:: IPD60R1K0CEAUMA1
Manufacturer:: Infineon

N-Channel MOSFET, 6.8 A, 650 V, 3-Pin DPAK Infineon IPD60R1K0CEAUMA1

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Bulk discount available

Subtotal (1 pack of 25 units)**

R 97 00

(exc. VAT)

R 111 50

(inc. VAT)

2200 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*

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Units	Per unit	Per Pack**
25 - 100	R 3,88	R 97,00
125 - 475	R 3,783	R 94,575
500 - 975	R 3,67	R 91,75
1000 - 2475	R 3,523	R 88,075
2500 +	R 3,382	R 84,55

**price indicative

RS stock no.:: 130-0898
Mfr. Part No.:: IPD60R1K0CEAUMA1
Manufacturer:: Infineon

Infineon CoolMOS™ CE Power MOSFET

Infineon CoolMOS™ CE Series MOSFET, 6.8A Maximum Continuous Drain Current, 61W Maximum Power Dissipation - IPD60R1K0CEAUMA1

This high-voltage MOSFET is designed to improve performance in various power applications. It is suitable for systems requiring robust switching capabilities and serves sectors such as automation and electronics. The CoolMOS technology employs superjunction principles, ensuring efficiency and reliability under diverse operating conditions.

Features & Benefits

• Reduction in switching and conduction losses enhances efficiency
• Robust body diode withstands hard commutation for increased reliability
• Low gate charge characteristics simplify driver requirements during operation
• Enhanced ESD robustness promotes durability in challenging environments
• Suitable for both hard and soft switching applications optimises performance

Applications

• Utilised in power factor correction stages for effective energy management
• Employed in hard switching PWM stages for efficient power conversion and control
• Integrates seamlessly within resonant switching stages across various device
• Suitable for multiple sectors including lighting, servers, and telecom equipment

How does the switching behaviour impact energy efficiency during operation?

Switching behaviour is important as lower switching losses contribute to higher overall efficiency, leading to cooler operation and reduced heat generation, which supports system longevity.

What protective measures are recommended during installation?

Using ferrite beads on gates or separate totem poles is advisable to reduce ringing and ensure stable operation during switching.

Can it operate effectively under extreme temperature conditions?

The MOSFET is rated for operation between -40°C and +150°C, enabling reliable functionality in various environmental conditions.

What considerations should be taken when paralleling multiple devices?

For effective paralleling, proper gate drive techniques should be employed to achieve balanced current distribution among the devices and optimise performance.

What implications do the maximum ratings have for system design?

Understanding maximum ratings such as continuous drain current and voltage limits is crucial in system design to avoid exceeding those thresholds, ensuring performance and reliability in applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	6.8 A
Maximum Drain Source Voltage	650 V
Package Type	DPAK (TO-252)
Series	CoolMOS™ CE
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	1 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.5V
Minimum Gate Threshold Voltage	2.5V
Maximum Power Dissipation	61 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Number of Elements per Chip	1
Length	6.73mm
Maximum Operating Temperature	+150 °C
Width	6.22mm
Typical Gate Charge @ Vgs	13 nC @ 10 V
Forward Diode Voltage	0.9V
Height	2.41mm
Minimum Operating Temperature	-40 °C