Infineon CoolMOS CE Type N-Channel MOSFET, 3.9 A, 800 V Enhancement, 3-Pin TO-252 IPD80R1K4CEATMA1
- RS stock no.:
- 214-4396
- Mfr. Part No.:
- IPD80R1K4CEATMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 15 units)*
R 223,35
(exc. VAT)
R 256,80
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 4,980 unit(s) shipping from 30 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 15 - 15 | R 14.89 | R 223.35 |
| 30 - 75 | R 14.518 | R 217.77 |
| 90 - 225 | R 14.083 | R 211.25 |
| 240 - 465 | R 13.519 | R 202.79 |
| 480 + | R 12.979 | R 194.69 |
*price indicative
- RS stock no.:
- 214-4396
- Mfr. Part No.:
- IPD80R1K4CEATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3.9A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | CoolMOS CE | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.4Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 63W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.35mm | |
| Length | 6.65mm | |
| Width | 6.42 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3.9A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series CoolMOS CE | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.4Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 63W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 2.35mm | ||
Length 6.65mm | ||
Width 6.42 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This Infineon 800V Cool MOS CE MOSFET has high voltage capability that combines safety with performance and ruggedness to allow stable designs at highest efficiency level.
It is RoHS compliant
Related links
- Infineon CoolMOS™ CE N-Channel MOSFET 800 V, 3-Pin DPAK IPD80R1K4CEATMA1
- Infineon CoolMOS™ CE N-Channel MOSFET 800 V, 3-Pin TO-220 FP IPA80R1K4CEXKSA2
- onsemi QFET N-Channel MOSFET 800 V, 3-Pin D2PAK FQB4N80TM
- Infineon CoolMOS™ CE N-Channel MOSFET 800 V, 3-Pin DPAK IPD80R1K0CEATMA1
- STMicroelectronics Silicon N-Channel MOSFET 800 V, 3-Pin DPAK-3 STD80N340K6
- STMicroelectronics SuperMESH Silicon N-Channel MOSFET 800 V, 3-Pin DPAK STD4NK80ZT4
- onsemi QFET N-Channel MOSFET 800 V, 3-Pin DPAK FQD2N80TM
- Infineon N-Channel MOSFET 800 V, 3-Pin DPAK IPD80R450P7ATMA1