Infineon CoolMOS CE Type N-Channel MOSFET, 3.9 A, 800 V Enhancement, 3-Pin TO-252 IPD80R1K4CEATMA1
- RS stock no.:
- 214-4396
- Mfr. Part No.:
- IPD80R1K4CEATMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 15 units)*
R 213,975
(exc. VAT)
R 246,075
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 4,980 unit(s) shipping from 06 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 15 - 15 | R 14.265 | R 213.98 |
| 30 - 75 | R 13.908 | R 208.62 |
| 90 - 225 | R 13.491 | R 202.37 |
| 240 - 465 | R 12.951 | R 194.27 |
| 480 + | R 12.433 | R 186.50 |
*price indicative
- RS stock no.:
- 214-4396
- Mfr. Part No.:
- IPD80R1K4CEATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.9A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | CoolMOS CE | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.4Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 63W | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.35mm | |
| Width | 6.42 mm | |
| Standards/Approvals | No | |
| Length | 6.65mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.9A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series CoolMOS CE | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.4Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 63W | ||
Maximum Operating Temperature 150°C | ||
Height 2.35mm | ||
Width 6.42 mm | ||
Standards/Approvals No | ||
Length 6.65mm | ||
Automotive Standard No | ||
This Infineon 800V Cool MOS CE MOSFET has high voltage capability that combines safety with performance and ruggedness to allow stable designs at highest efficiency level.
It is RoHS compliant
Related links
- Infineon CoolMOS CE Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252
- Infineon CoolMOS CE Type N-Channel MOSFET 800 V P, 3-Pin TO-220
- Infineon CoolMOS CE Type N-Channel MOSFET 800 V P, 3-Pin TO-220 IPA80R1K4CEXKSA2
- Infineon CoolMOS CE Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252
- Infineon CoolMOS CE Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252 IPD80R1K0CEATMA1
- Infineon CoolMOS CE Type N-Channel MOSFET 550 V Enhancement, 3-Pin TO-252
- Infineon CoolMOS CE Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-252
- Infineon CoolMOS CE Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252