N-Channel MOSFET, 5.7 A, 800 V, 3-Pin DPAK Infineon IPD80R1K0CEATMA1

RS stock no.:: 165-8015
Mfr. Part No.:: IPD80R1K0CEATMA1
Manufacturer:: Infineon

N-Channel MOSFET, 5.7 A, 800 V, 3-Pin DPAK Infineon IPD80R1K0CEATMA1

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2340 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)

Not Available for premium delivery

Price (Excl VAT) Each (On a Reel of 2500)

R 12,606

(exc. VAT)

R 14,497

(inc. VAT)

Units	Per unit	Per Reel*
2500 +	R 12,606	R 31 515,00

*price indicative

RS stock no.:: 165-8015
Mfr. Part No.:: IPD80R1K0CEATMA1
Manufacturer:: Infineon

IPD80R1K0CE MOSFET CoolMOS CE
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	5.7 A
Maximum Drain Source Voltage	800 V
Series	CoolMOS™ CE
Package Type	DPAK (TO-252)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	950 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.9V
Minimum Gate Threshold Voltage	2.1V
Maximum Power Dissipation	83 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Width	6.22mm
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Length	6.73mm
Typical Gate Charge @ Vgs	31 nC @ 10 V
Number of Elements per Chip	1
Height	2.41mm
Forward Diode Voltage	1.2V
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 5.7 A, 800 V, 3-Pin DPAK Infineon IPD80R1K0CEATMA1

Infineon CoolMOS™ CE Power MOSFET