Infineon CoolMOS CE Type N-Channel MOSFET, 14.1 A, 550 V Enhancement, 3-Pin TO-252 IPD50R380CEAUMA1
- RS stock no.:
- 130-0897
- Mfr. Part No.:
- IPD50R380CEAUMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 10 units)*
R 150,78
(exc. VAT)
R 173,40
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 30 unit(s) shipping from 11 May 2026
- Plus 180 unit(s) shipping from 18 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 15.078 | R 150.78 |
| 50 - 490 | R 14.701 | R 147.01 |
| 500 - 990 | R 14.26 | R 142.60 |
| 1000 - 2490 | R 13.69 | R 136.90 |
| 2500 + | R 13.142 | R 131.42 |
*price indicative
- RS stock no.:
- 130-0897
- Mfr. Part No.:
- IPD50R380CEAUMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 14.1A | |
| Maximum Drain Source Voltage Vds | 550V | |
| Series | CoolMOS CE | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 380mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.85V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 98W | |
| Typical Gate Charge Qg @ Vgs | 24.8nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Height | 2.41mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 14.1A | ||
Maximum Drain Source Voltage Vds 550V | ||
Series CoolMOS CE | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 380mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.85V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 98W | ||
Typical Gate Charge Qg @ Vgs 24.8nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Height 2.41mm | ||
Automotive Standard No | ||
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon CoolMOS CE Type N-Channel MOSFET 550 V Enhancement, 3-Pin TO-252
- Infineon CoolMOS CE Type N-Channel MOSFET 550 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS CE Type N-Channel MOSFET 550 V Enhancement, 4-Pin SOT-223
- Infineon CoolMOS CE Type N-Channel MOSFET 550 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS CE Type N-Channel MOSFET 550 V Enhancement, 4-Pin SOT-223
- Infineon CoolMOS CE Type N-Channel MOSFET 550 V Enhancement, 4-Pin SOT-223
- Infineon CoolMOS CE Type N-Channel MOSFET 550 V Enhancement, 3-Pin TO-220 IPA50R280CEXKSA2
- Infineon CoolMOS CE Type N-Channel MOSFET 550 V Enhancement, 3-Pin TO-220 IPP50R190CEXKSA1