Infineon OptiMOS 3 Type N-Channel MOSFET, 21 A, 150 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 2500 units)*

R 22 067,50

(exc. VAT)

R 25 377,50

(inc. VAT)

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Units
Per unit
Per Reel*
2500 - 2500R 8.827R 22,067.50
5000 - 5000R 8.606R 21,515.00
7500 +R 8.348R 20,870.00

*price indicative

RS stock no.:
214-4380
Mfr. Part No.:
IPD530N15N3GATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

21A

Maximum Drain Source Voltage Vds

150V

Package Type

TO-252

Series

OptiMOS 3

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

53mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

68W

Typical Gate Charge Qg @ Vgs

8.7nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Height

2.35mm

Width

6.42 mm

Length

6.65mm

Standards/Approvals

No

Automotive Standard

No

This Infineon OptiMOS 3 MOSFET is ideal for high-frequency switching and synchronous rectification. It is qualified according to JEDEC for target application

It is Halogen-free according to IEC61249-2-21

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