Infineon OptiMOS 3 Type N-Channel MOSFET, 50 A, 150 V Enhancement, 3-Pin TO-220 IPP200N15N3GXKSA1
- RS stock no.:
- 214-4412
- Distrelec Article No.:
- 304-31-967
- Mfr. Part No.:
- IPP200N15N3GXKSA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 10 units)*
R 213,11
(exc. VAT)
R 245,08
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 500 unit(s) shipping from 30 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | R 21.311 | R 213.11 |
| 20 - 90 | R 20.778 | R 207.78 |
| 100 - 240 | R 20.155 | R 201.55 |
| 250 - 490 | R 19.349 | R 193.49 |
| 500 + | R 18.575 | R 185.75 |
*price indicative
- RS stock no.:
- 214-4412
- Distrelec Article No.:
- 304-31-967
- Mfr. Part No.:
- IPP200N15N3GXKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | TO-220 | |
| Series | OptiMOS 3 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Maximum Power Dissipation Pd | 150W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.2mm | |
| Height | 4.4mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type TO-220 | ||
Series OptiMOS 3 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Maximum Power Dissipation Pd 150W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Length 10.2mm | ||
Height 4.4mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This Infineon OptiMOS 3 MOSFET is ideal for high-frequency switching and synchronous rectification. It is qualified according to JEDEC for target application
It is Halogen-free according to IEC61249-2-21
Related links
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- Infineon OptiMOS 3 Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-263 IPB200N15N3GATMA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS 3 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS 3 Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS 3 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263 IPB081N06L3GATMA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220 IPP111N15N3GXKSA1