Infineon OptiMOS 3 Type N-Channel MOSFET, 21 A, 150 V Enhancement, 8-Pin TSDSON

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Subtotal (1 reel of 5000 units)*

R 57 590,00

(exc. VAT)

R 66 230,00

(inc. VAT)

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Units
Per unit
Per Reel*
5000 - 5000R 11.518R 57,590.00
10000 - 20000R 11.23R 56,150.00
25000 +R 10.893R 54,465.00

*price indicative

RS stock no.:
165-6689
Mfr. Part No.:
BSZ520N15NS3GATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

21A

Maximum Drain Source Voltage Vds

150V

Series

OptiMOS 3

Package Type

TSDSON

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

52mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

57W

Typical Gate Charge Qg @ Vgs

8.7nC

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Length

3.4mm

Width

3.4 mm

Height

1.1mm

Standards/Approvals

No

Automotive Standard

No

Infineon OptiMOS™3 Power MOSFETs, 100V and over


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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