Infineon OptiMOS 3 Type N-Channel MOSFET, 21 A, 150 V Enhancement, 3-Pin TO-252 IPD530N15N3GATMA1

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Subtotal (1 pack of 15 units)*

R 226,395

(exc. VAT)

R 260,355

(inc. VAT)

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Units
Per unit
Per Pack*
15 - 15R 15.093R 226.40
30 - 75R 14.715R 220.73
90 - 225R 14.274R 214.11
240 - 465R 13.703R 205.55
480 +R 13.155R 197.33

*price indicative

Packaging Options:
RS stock no.:
214-4381
Mfr. Part No.:
IPD530N15N3GATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

21A

Maximum Drain Source Voltage Vds

150V

Series

OptiMOS 3

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

53mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

8.7nC

Maximum Power Dissipation Pd

68W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Length

6.65mm

Standards/Approvals

No

Height

2.35mm

Automotive Standard

No

This Infineon OptiMOS 3 MOSFET is ideal for high-frequency switching and synchronous rectification. It is qualified according to JEDEC for target application

It is Halogen-free according to IEC61249-2-21

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