Infineon OptiMOS 3 Type N-Channel MOSFET, 21 A, 150 V Enhancement, 3-Pin TO-252 IPD530N15N3GATMA1

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Subtotal (1 pack of 15 units)*

R 231,945

(exc. VAT)

R 266,73

(inc. VAT)

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Units
Per unit
Per Pack*
15 - 15R 15.463R 231.95
30 - 75R 15.077R 226.16
90 - 225R 14.625R 219.38
240 - 465R 14.04R 210.60
480 +R 13.479R 202.19

*price indicative

Packaging Options:
RS stock no.:
214-4381
Mfr. Part No.:
IPD530N15N3GATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

21A

Maximum Drain Source Voltage Vds

150V

Package Type

TO-252

Series

OptiMOS 3

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

53mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

8.7nC

Maximum Power Dissipation Pd

68W

Maximum Operating Temperature

175°C

Length

6.65mm

Width

6.42 mm

Height

2.35mm

Standards/Approvals

No

Automotive Standard

No

This Infineon OptiMOS 3 MOSFET is ideal for high-frequency switching and synchronous rectification. It is qualified according to JEDEC for target application

It is Halogen-free according to IEC61249-2-21

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