N-Channel MOSFET, 50 A, 150 V, 3-Pin D2PAK Infineon IPB200N15N3GATMA1

RS stock no.:: 754-5443
Mfr. Part No.:: IPB200N15N3GATMA1
Manufacturer:: Infineon

N-Channel MOSFET, 50 A, 150 V, 3-Pin D2PAK Infineon IPB200N15N3GATMA1

Bulk discount available

Price (Excl VAT) Each (In a Pack of 2)

R 20,45

(exc. VAT)

R 23,52

(inc. VAT)

4 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*

* Delivery dates may change based on your chosen quantity and delivery address.

Not Available for premium delivery

Units	Per unit	Per Pack**
2 - 48	R 20,45	R 40,90
50 - 198	R 19,94	R 39,88
200 - 998	R 19,34	R 38,68
1000 - 1998	R 18,565	R 37,13
2000 +	R 17,82	R 35,64

**price indicative

RS stock no.:: 754-5443
Mfr. Part No.:: IPB200N15N3GATMA1
Manufacturer:: Infineon

MOSFET N-ch 150V 50A OptiMOS3 TO263
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	50 A
Maximum Drain Source Voltage	150 V
Series	OptiMOS™ 3
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	20 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	150 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	23 nC @ 10 V
Length	10.31mm
Transistor Material	Si
Width	9.45mm
Height	4.57mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 50 A, 150 V, 3-Pin D2PAK Infineon IPB200N15N3GATMA1

Infineon OptiMOS™3 Power MOSFETs, 100V and over

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