Infineon OptiMOS 3 Type N-Channel MOSFET, 37 A, 150 V Enhancement, 3-Pin TO-220 IPA105N15N3GXKSA1
- RS stock no.:
- 906-2956
- Mfr. Part No.:
- IPA105N15N3GXKSA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 4 units)*
R 385,012
(exc. VAT)
R 442,764
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 296 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 4 - 4 | R 96.253 | R 385.01 |
| 8 - 36 | R 93.845 | R 375.38 |
| 40 - 76 | R 91.03 | R 364.12 |
| 80 - 196 | R 87.39 | R 349.56 |
| 200 + | R 83.895 | R 335.58 |
*price indicative
- RS stock no.:
- 906-2956
- Mfr. Part No.:
- IPA105N15N3GXKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 37A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | OptiMOS 3 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 11.1mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Maximum Power Dissipation Pd | 40.5W | |
| Maximum Operating Temperature | 175°C | |
| Height | 16.15mm | |
| Length | 10.65mm | |
| Width | 4.85 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Distrelec Product Id | 304-44-433 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 37A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series OptiMOS 3 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 11.1mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Maximum Power Dissipation Pd 40.5W | ||
Maximum Operating Temperature 175°C | ||
Height 16.15mm | ||
Length 10.65mm | ||
Width 4.85 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Distrelec Product Id 304-44-433 | ||
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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