Vishay TrenchFET Gen IV Type N-Channel MOSFET, 81 A, 100 V Enhancement, 8-Pin SO-8

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Subtotal (1 pack of 25 units)*

R 797,275

(exc. VAT)

R 916,875

(inc. VAT)

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  • Shipping from 07 June 2027
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Units
Per unit
Per Pack*
25 - 75R 31.891R 797.28
100 - 475R 31.094R 777.35
500 - 975R 30.161R 754.03
1000 - 1475R 28.954R 723.85
1500 +R 27.796R 694.90

*price indicative

RS stock no.:
200-6862
Mfr. Part No.:
SiR104ADP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

81A

Maximum Drain Source Voltage Vds

100V

Series

TrenchFET Gen IV

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

7.2mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

70nC

Maximum Power Dissipation Pd

100W

Maximum Operating Temperature

150°C

Height

6.15mm

Length

5.15mm

Standards/Approvals

No

Automotive Standard

No

The Vishay SiR104ADP-T1-RE3 is a N-channel 100V (D-S) MOSFET.

TrenchFET Gen IV power MOSFET

Very low RDS x Qg figure-of-merit (FOM)

Tuned for the lowest RDS x Qoss FOM

100 % Rg and UIS tested

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