Vishay TrenchFET Gen IV Type N-Channel MOSFET, 81 A, 100 V Enhancement, 8-Pin SO-8 SiR104ADP-T1-RE3

Image representative of range

View all MOSFETs

Subtotal (1 reel of 3000 units)*

R 53 775,00

(exc. VAT)

R 61 842,00

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 07 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
3000 +R 17.925R 53,775.00

*price indicative

RS stock no.:
200-6861
Mfr. Part No.:
SiR104ADP-T1-RE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

81A

Maximum Drain Source Voltage Vds

100V

Series

TrenchFET Gen IV

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

7.2mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

70nC

Forward Voltage Vf

1.1V

Maximum Power Dissipation Pd

100W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Width

5.15 mm

Height

6.15mm

Length

5.15mm

Standards/Approvals

No

Automotive Standard

No

The Vishay SiR104ADP-T1-RE3 is a N-channel 100V (D-S) MOSFET.

TrenchFET Gen IV power MOSFET

Very low RDS x Qg figure-of-merit (FOM)

Tuned for the lowest RDS x Qoss FOM

100 % Rg and UIS tested

Related links