MPN

Vishay TrenchFET Gen IV Type N-Channel MOSFET, 65.8 A, 100 V Enhancement, 8-Pin SO-8

RS stock no.:: 200-6865
Mfr. Part No.:: SiR106ADP-T1-RE3
Manufacturer:: Vishay

Vishay TrenchFET Gen IV Type N-Channel MOSFET, 65.8 A, 100 V Enhancement, 8-Pin SO-8

Image representative of range

Bulk discount available

Subtotal (1 pack of 25 units)*

R 683,35

(exc. VAT)

R 785,85

(inc. VAT)

FREE delivery for orders over R 1,500.00

Temporarily out of stock

Shipping from 06 July 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
25 - 75	R 27.334	R 683.35
100 - 475	R 26.651	R 666.28
500 - 975	R 25.852	R 646.30
1000 - 1475	R 24.818	R 620.45
1500 +	R 23.825	R 595.63

*price indicative

RS stock no.:: 200-6865
Mfr. Part No.:: SiR106ADP-T1-RE3
Manufacturer:: Vishay

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	65.8A
	Maximum Drain Source Voltage Vds	100V
	Package Type	SO-8
	Series	TrenchFET Gen IV
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	9mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	83.3W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	52nC
	Forward Voltage Vf	1.1V
	Maximum Operating Temperature	150°C
	Length	5.15mm
	Height	6.15mm
	Standards/Approvals	No
	Width	5.15 mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 65.8A
	Maximum Drain Source Voltage Vds 100V
	Package Type SO-8
	Series TrenchFET Gen IV
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 9mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 83.3W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 52nC
	Forward Voltage Vf 1.1V
	Maximum Operating Temperature 150°C
	Length 5.15mm
	Height 6.15mm
	Standards/Approvals No
	Width 5.15 mm
	Automotive Standard No

Document- SiR106ADP-T1-RE3

The Vishay SiR106ADP-T1-RE3 is a N-channel 100V (D-S) MOSFET.

TrenchFET Gen IV power MOSFET

Very low RDS x Qg figure-of-merit (FOM)

Tuned for the lowest RDS x Qoss FOM

100 % Rg and UIS tested

Vishay TrenchFET Gen IV Type N-Channel MOSFET, 65.8 A, 100 V Enhancement, 8-Pin SO-8

FREE delivery for orders over R 1,500.00

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