Dual N/P-Channel-Channel MOSFET, 30 A, 40 V, 4-Pin PowerPak SO-8L Dual Vishay Siliconix SQJ504EP-T1_GE3

RS stock no.:: 178-3720
Mfr. Part No.:: SQJ504EP-T1_GE3
Manufacturer:: Vishay Siliconix

Dual N/P-Channel-Channel MOSFET, 30 A, 40 V, 4-Pin PowerPak SO-8L Dual Vishay Siliconix SQJ504EP-T1_GE3

Price (Excl VAT) Each (On a Reel of 3000)

R 11,642

(exc. VAT)

R 13,388

(inc. VAT)

3000 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*

* Delivery dates may change based on your chosen quantity and delivery address.

Not Available for premium delivery

Units	Per unit	Per Reel**
3000 +	R 11,642	R 34 926,00

**price indicative

RS stock no.:: 178-3720
Mfr. Part No.:: SQJ504EP-T1_GE3
Manufacturer:: Vishay Siliconix

Datasheet

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	30 A
Maximum Drain Source Voltage	40 V
Series	TrenchFET
Package Type	PowerPak SO-8L Dual
Mounting Type	Surface Mount
Pin Count	4
Maximum Drain Source Resistance	30 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.5V
Minimum Gate Threshold Voltage	1.5V
Maximum Power Dissipation	34 W, 34 W
Maximum Gate Source Voltage	±20 V
Typical Gate Charge @ Vgs	18 (N Channel) nC @ 10 V, 56 (P Channel) nC @ 10 V
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	2
Width	5mm
Transistor Material	Si
Length	5.99mm
Height	1.07mm
Automotive Standard	AEC-Q101
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.2V

Dual N/P-Channel-Channel MOSFET, 30 A, 40 V, 4-Pin PowerPak SO-8L Dual Vishay Siliconix SQJ504EP-T1_GE3

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