Vishay Dual TrenchFET 2 Type P, Type N-Channel MOSFET, 4 A, 100 V Enhancement, 8-Pin PowerPAK 1212-8 Dual

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Subtotal (1 reel of 3000 units)*

R 23 076,00

(exc. VAT)

R 26 538,00

(inc. VAT)

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Being discontinued
  • Final 3,000 unit(s), ready to ship from another location
Units
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Per Reel*
3000 +R 7.692R 23,076.00

*price indicative

RS stock no.:
228-2924
Mfr. Part No.:
SiS590DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P, Type N

Maximum Continuous Drain Current Id

4A

Maximum Drain Source Voltage Vds

100V

Package Type

PowerPAK 1212-8 Dual

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.251Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

23.1W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

4.5nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Transistor Configuration

Dual

Standards/Approvals

RoHS

Number of Elements per Chip

2

Automotive Standard

No

The Vishay Combo N- & P-Channel -100 V MOSFET.

100 % Rg and UIS tested

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