N-Channel MOSFET, 53 A, 800 V, 4-Pin SOT-227 IXYS IXFN60N80P

RS stock no.:: 168-4494
Mfr. Part No.:: IXFN60N80P
Manufacturer:: IXYS

N-Channel MOSFET, 53 A, 800 V, 4-Pin SOT-227 IXYS IXFN60N80P

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On back order for despatch 2025/02/06

Not Available for premium delivery

Price (Excl VAT) Each (In a Tube of 10)

R 777,515

(exc. VAT)

R 894,142

(inc. VAT)

Units	Per unit	Per Tube*
10 +	R 777,515	R 7 775,15

*price indicative

RS stock no.:: 168-4494
Mfr. Part No.:: IXFN60N80P
Manufacturer:: IXYS

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	53 A
Maximum Drain Source Voltage	800 V
Series	HiperFET, Polar
Package Type	SOT-227
Mounting Type	Screw Mount
Pin Count	4
Maximum Drain Source Resistance	140 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	1.04 kW
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Typical Gate Charge @ Vgs	250 nC @ 10 V
Length	38.23mm
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Number of Elements per Chip	1
Width	25.42mm
Minimum Operating Temperature	-55 °C
Height	9.6mm

N-Channel MOSFET, 53 A, 800 V, 4-Pin SOT-227 IXYS IXFN60N80P

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series