IXYS HiperFET, Polar Type N-Channel MOSFET, 61 A, 500 V Enhancement, 4-Pin SOT-227

Image representative of range

Bulk discount available

Subtotal (1 tube of 10 units)*

R 4 648,03

(exc. VAT)

R 5 345,23

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • 30 unit(s) shipping from 25 March 2026
  • Plus 10 unit(s) shipping from 10 March 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tube*
10 - 10R 464.803R 4,648.03
20 - 30R 453.183R 4,531.83
40 - 90R 439.588R 4,395.88
100 - 190R 422.004R 4,220.04
200 +R 405.124R 4,051.24

*price indicative

RS stock no.:
920-0789
Mfr. Part No.:
IXFN64N50P
Manufacturer:
IXYS
Find similar products by selecting one or more attributes.
Select all

Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

61A

Maximum Drain Source Voltage Vds

500V

Package Type

SOT-227

Series

HiperFET, Polar

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

85mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

150nC

Forward Voltage Vf

1.5V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

700W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

25.42 mm

Height

9.6mm

Length

38.23mm

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series


N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

Related links