IXYS HiperFET, Polar Type N-Channel MOSFET, 66 A, 500 V Enhancement, 4-Pin SOT-227

Image representative of range

Bulk discount available

Subtotal (1 tube of 10 units)*

R 4 995,10

(exc. VAT)

R 5 744,40

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 18 March 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per unit
Per Tube*
10 - 10R 499.51R 4,995.10
20 - 30R 487.022R 4,870.22
40 - 90R 472.411R 4,724.11
100 - 190R 453.515R 4,535.15
200 +R 435.374R 4,353.74

*price indicative

RS stock no.:
920-0745
Mfr. Part No.:
IXFN80N50P
Manufacturer:
IXYS
Find similar products by selecting one or more attributes.
Select all

Brand

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

66A

Maximum Drain Source Voltage Vds

500V

Series

HiperFET, Polar

Package Type

SOT-227

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

65mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.5V

Typical Gate Charge Qg @ Vgs

195nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

700W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

38.2mm

Height

9.6mm

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series


N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

Related links