IXYS HiperFET, Polar Type N-Channel MOSFET, 66 A, 500 V Enhancement, 4-Pin SOT-227
- RS stock no.:
- 920-0745
- Mfr. Part No.:
- IXFN80N50P
- Manufacturer:
- IXYS
Image representative of range
Bulk discount available
Subtotal (1 tube of 10 units)*
R 4 995,10
(exc. VAT)
R 5 744,40
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 20 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 10 - 10 | R 499.51 | R 4,995.10 |
| 20 - 30 | R 487.022 | R 4,870.22 |
| 40 - 90 | R 472.411 | R 4,724.11 |
| 100 - 190 | R 453.515 | R 4,535.15 |
| 200 + | R 435.374 | R 4,353.74 |
*price indicative
- RS stock no.:
- 920-0745
- Mfr. Part No.:
- IXFN80N50P
- Manufacturer:
- IXYS
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 66A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | SOT-227 | |
| Series | HiperFET, Polar | |
| Mount Type | Panel | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.5V | |
| Maximum Power Dissipation Pd | 700W | |
| Typical Gate Charge Qg @ Vgs | 195nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 25.07 mm | |
| Height | 9.6mm | |
| Length | 38.2mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 66A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type SOT-227 | ||
Series HiperFET, Polar | ||
Mount Type Panel | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.5V | ||
Maximum Power Dissipation Pd 700W | ||
Typical Gate Charge Qg @ Vgs 195nC | ||
Maximum Operating Temperature 150°C | ||
Width 25.07 mm | ||
Height 9.6mm | ||
Length 38.2mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
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