IXYS HiperFET, Polar Type N-Channel MOSFET, 66 A, 500 V Enhancement, 4-Pin SOT-227

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Subtotal (1 tube of 10 units)*

R 5 087,88

(exc. VAT)

R 5 851,06

(inc. VAT)

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In Stock
  • 10 unit(s) ready to ship from another location
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Units
Per unit
Per Tube*
10 - 10R 508.788R 5,087.88
20 - 30R 496.068R 4,960.68
40 - 90R 481.186R 4,811.86
100 - 190R 461.939R 4,619.39
200 +R 443.461R 4,434.61

*price indicative

RS stock no.:
920-0745
Mfr. Part No.:
IXFN80N50P
Manufacturer:
IXYS
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Brand

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

66A

Maximum Drain Source Voltage Vds

500V

Package Type

SOT-227

Series

HiperFET, Polar

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

65mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.5V

Maximum Power Dissipation Pd

700W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

195nC

Maximum Operating Temperature

150°C

Height

9.6mm

Length

38.2mm

Standards/Approvals

No

Automotive Standard

No

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