IXYS Type N-Channel MOSFET, 115 A, 300 V Enhancement, 4-Pin SOT-227
- RS stock no.:
- 920-0748
- Mfr. Part No.:
- IXFN140N30P
- Manufacturer:
- IXYS
Image representative of range
Bulk discount available
Subtotal (1 tube of 10 units)*
R 6 289,51
(exc. VAT)
R 7 232,94
(inc. VAT)
Add 10 units to get free delivery
In Stock
- 40 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 10 - 10 | R 628.951 | R 6,289.51 |
| 20 - 30 | R 613.227 | R 6,132.27 |
| 40 - 90 | R 594.83 | R 5,948.30 |
| 100 - 190 | R 571.037 | R 5,710.37 |
| 200 + | R 548.196 | R 5,481.96 |
*price indicative
- RS stock no.:
- 920-0748
- Mfr. Part No.:
- IXFN140N30P
- Manufacturer:
- IXYS
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 115A | |
| Maximum Drain Source Voltage Vds | 300V | |
| Package Type | SOT-227 | |
| Mount Type | Panel | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 24mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 185nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 700W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 9.6mm | |
| Width | 25.07 mm | |
| Length | 38.2mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 115A | ||
Maximum Drain Source Voltage Vds 300V | ||
Package Type SOT-227 | ||
Mount Type Panel | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 24mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 185nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 700W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Height 9.6mm | ||
Width 25.07 mm | ||
Length 38.2mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- US
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Related links
- IXYS Type N-Channel MOSFET 300 V Enhancement, 4-Pin SOT-227 IXFN140N30P
- IXYS Type N-Channel MOSFET 200 V Enhancement, 4-Pin SOT-227
- IXYS Type N-Channel MOSFET 200 V Enhancement, 4-Pin SOT-227 IXFN140N20P
- IXYS Type N-Channel MOSFET 300 V Enhancement, 4-Pin SOT-227
- IXYS Type N-Channel MOSFET 300 V Enhancement, 4-Pin SOT-227
- IXYS Type N-Channel MOSFET 300 V Enhancement, 4-Pin SOT-227 IXFN210N30P3
- IXYS Type N-Channel MOSFET 300 V Enhancement, 4-Pin SOT-227 IXFN102N30P
- IXYS Type N-Channel MOSFET 1 kV Enhancement, 4-Pin SOT-227