IXYS Type N-Channel MOSFET, 86 A, 300 V Enhancement, 4-Pin SOT-227

Image representative of range

Subtotal (1 tube of 10 units)*

R 4 778,44

(exc. VAT)

R 5 495,21

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 22 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tube*
10 +R 477.844R 4,778.44

*price indicative

RS stock no.:
168-4467
Mfr. Part No.:
IXFN102N30P
Manufacturer:
IXYS
Find similar products by selecting one or more attributes.
Select all

Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

86A

Maximum Drain Source Voltage Vds

300V

Package Type

SOT-227

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

33mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.5V

Typical Gate Charge Qg @ Vgs

224nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

570W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

38.23mm

Standards/Approvals

No

Width

25.42 mm

Height

9.6mm

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series


N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

Related links