IXYS HiperFET, Polar Type N-Channel MOSFET, 53 A, 800 V Enhancement, 4-Pin SOT-227 IXFN60N80P

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Subtotal (1 unit)*

R 813,20

(exc. VAT)

R 935,18

(inc. VAT)

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Units
Per unit
1 - 4R 813.20
5 - 24R 792.87
25 - 99R 769.08
100 +R 738.32

*price indicative

RS stock no.:
194-350
Distrelec Article No.:
302-53-376
Mfr. Part No.:
IXFN60N80P
Manufacturer:
IXYS
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Brand

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

53A

Maximum Drain Source Voltage Vds

800V

Package Type

SOT-227

Series

HiperFET, Polar

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

140mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

250nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

1.04kW

Forward Voltage Vf

1.5V

Maximum Operating Temperature

150°C

Length

38.23mm

Height

9.6mm

Standards/Approvals

No

Automotive Standard

No

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