Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 6.5 A, 40 V Enhancement, 8-Pin SOIC SI4909DY-T1-GE3

Image representative of range

Bulk discount available

Subtotal (1 pack of 20 units)*

R 258,08

(exc. VAT)

R 296,80

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 4,940 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
20 - 80R 12.904R 258.08
100 - 480R 12.582R 251.64
500 - 1480R 12.204R 244.08
1500 - 2480R 11.716R 234.32
2500 +R 11.248R 224.96

*price indicative

Packaging Options:
RS stock no.:
818-1302
Mfr. Part No.:
SI4909DY-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

Power MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

6.5A

Maximum Drain Source Voltage Vds

40V

Series

TrenchFET

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

34mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

3.2W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

150°C

Typical Gate Charge Qg @ Vgs

41.5nC

Maximum Operating Temperature

-55°C

Transistor Configuration

Isolated

Length

5mm

Standards/Approvals

No

Height

1.55mm

Width

4 mm

Number of Elements per Chip

2

Automotive Standard

No

COO (Country of Origin):
CN

Dual P-Channel MOSFET, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


Related links