Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 6.5 A, 40 V Enhancement, 8-Pin SOIC SI4909DY-T1-GE3

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Subtotal (1 pack of 20 units)*

R 261,32

(exc. VAT)

R 300,52

(inc. VAT)

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Units
Per unit
Per Pack*
20 - 80R 13.066R 261.32
100 - 480R 12.74R 254.80
500 - 1480R 12.358R 247.16
1500 - 2480R 11.863R 237.26
2500 +R 11.389R 227.78

*price indicative

Packaging Options:
RS stock no.:
818-1302
Mfr. Part No.:
SI4909DY-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

6.5A

Maximum Drain Source Voltage Vds

40V

Series

TrenchFET

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

34mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

41.5nC

Minimum Operating Temperature

150°C

Maximum Power Dissipation Pd

3.2W

Maximum Operating Temperature

-55°C

Transistor Configuration

Isolated

Height

1.55mm

Standards/Approvals

No

Length

5mm

Number of Elements per Chip

2

Automotive Standard

No

COO (Country of Origin):
CN

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