Vishay TrenchFET Type N-Channel MOSFET, 350.8 A, 30 V Enhancement, 8-Pin SO-8

Image representative of range

Subtotal (1 reel of 3000 units)*

R 40 509,00

(exc. VAT)

R 46 584,00

(inc. VAT)

Add to Basket
Select or type quantity
Last RS stock
  • Final 3,000 unit(s), ready to ship from another location
Units
Per unit
Per Reel*
3000 +R 13.503R 40,509.00

*price indicative

RS stock no.:
228-2900
Mfr. Part No.:
SiR500DP-T1-RE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

350.8A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.47mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

16 V

Maximum Power Dissipation Pd

104.1W

Typical Gate Charge Qg @ Vgs

120nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET N-channel is 30 V MOSFET.

100 % Rg and UIS tested

Related links