Vishay TrenchFET Type N-Channel MOSFET, 113 A, 45 V Enhancement, 8-Pin SO-8 SiR450DP-T1-RE3

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Subtotal (1 pack of 5 units)*

R 161,83

(exc. VAT)

R 186,105

(inc. VAT)

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Last RS stock
  • Final 5,880 unit(s), ready to ship from another location

Units
Per unit
Per Pack*
5 - 45R 32.366R 161.83
50 - 95R 31.556R 157.78
100 - 245R 30.61R 153.05
250 - 995R 29.386R 146.93
1000 +R 28.21R 141.05

*price indicative

Packaging Options:
RS stock no.:
228-2899
Mfr. Part No.:
SiR450DP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

113A

Maximum Drain Source Voltage Vds

45V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.8mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

75.5nC

Maximum Power Dissipation Pd

48W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET N-channel is 45 V MOSFET.

100 % Rg and UIS tested

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