Vishay TrenchFET Type N-Channel MOSFET, 113 A, 45 V Enhancement, 8-Pin SO-8 SiR450DP-T1-RE3

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Subtotal (1 pack of 5 units)*

R 159,82

(exc. VAT)

R 183,795

(inc. VAT)

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Last RS stock
  • Final 5,880 unit(s), ready to ship from another location
Units
Per unit
Per Pack*
5 - 45R 31.964R 159.82
50 - 95R 31.164R 155.82
100 - 245R 30.23R 151.15
250 - 995R 29.02R 145.10
1000 +R 27.86R 139.30

*price indicative

Packaging Options:
RS stock no.:
228-2899
Mfr. Part No.:
SiR450DP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

113A

Maximum Drain Source Voltage Vds

45V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.8mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

75.5nC

Maximum Power Dissipation Pd

48W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET N-channel is 45 V MOSFET.

100 % Rg and UIS tested

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