Infineon HEXFET Type N-Channel MOSFET, 180 A, 40 V Enhancement, 3-Pin TO-252 IRFR7440TRPBF

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Subtotal (1 pack of 5 units)*

R 120,32

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R 138,37

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 45R 24.064R 120.32
50 - 95R 23.462R 117.31
100 - 495R 22.758R 113.79
500 - 995R 21.848R 109.24
1000 +R 20.974R 104.87

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Packaging Options:
RS stock no.:
130-0989
Mfr. Part No.:
IRFR7440TRPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

2.4mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

89nC

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

140W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

6.22mm

Length

6.73mm

Width

2.39 mm

Distrelec Product Id

304-36-990

Automotive Standard

No

N-Channel Power MOSFET 40V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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