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Infineon IPD Type N-Channel MOSFET, 180 A, 40 V P, 3-Pin TO-252 IPD80R1K2P7ATMA1

RS stock no.:: 244-1596
Mfr. Part No.:: IPD80R1K2P7ATMA1
Manufacturer:: Infineon

Infineon IPD Type N-Channel MOSFET, 180 A, 40 V P, 3-Pin TO-252 IPD80R1K2P7ATMA1

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Bulk discount available

Subtotal (1 pack of 5 units)*

R 124,97

(exc. VAT)

R 143,715

(inc. VAT)

FREE delivery for orders over R 1,500.00

In Stock

Plus 2,205 unit(s) shipping from 05 January 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
5 - 5	R 24.994	R 124.97
10 - 95	R 24.37	R 121.85
100 - 245	R 23.638	R 118.19
250 - 495	R 22.692	R 113.46
500 +	R 21.784	R 108.92

*price indicative

RS stock no.:: 244-1596
Mfr. Part No.:: IPD80R1K2P7ATMA1
Manufacturer:: Infineon

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	180A
	Maximum Drain Source Voltage Vds	40V
	Series	IPD
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.4mΩ
	Channel Mode	P
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	81W
	Typical Gate Charge Qg @ Vgs	80nC
	Forward Voltage Vf	1.1V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 180A
	Maximum Drain Source Voltage Vds 40V
	Series IPD
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.4mΩ
	Channel Mode P
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 81W
	Typical Gate Charge Qg @ Vgs 80nC
	Forward Voltage Vf 1.1V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - IPD80R1K2P7ATMA1

The Infineon MOSFET 800V CoolMOS™ P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon’s over 18 years pioneering super junction technology innovation.

Best-in-class FOM RDS(on) * Eoss

Best-in-class DPAK RDS(on)

Best-in-class V(GS)th of 3V

Fully optimized portfolio

Integrated Zener Diode ESD protection

Infineon IPD Type N-Channel MOSFET, 180 A, 40 V P, 3-Pin TO-252 IPD80R1K2P7ATMA1

FREE delivery for orders over R 1,500.00

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