ROHM AG086FGD3HRB Type N-Channel Single MOSFETs, 80 A, 40 V Enhancement, 3-Pin TO-252 (TL) AG086FGD3HRBTL

RS stock no.:: 687-456
Mfr. Part No.:: AG086FGD3HRBTL
Manufacturer:: ROHM

ROHM AG086FGD3HRB Type N-Channel Single MOSFETs, 80 A, 40 V Enhancement, 3-Pin TO-252 (TL) AG086FGD3HRBTL

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Bulk discount available

Subtotal (1 tape of 2 units)*

R 80,37

(exc. VAT)

R 92,426

(inc. VAT)

FREE delivery for orders over R 1,500.00

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Units	Per unit	Per Tape*
2 - 18	R 40.185	R 80.37
20 - 48	R 39.18	R 78.36
50 - 198	R 38.005	R 76.01
200 - 998	R 36.485	R 72.97
1000 +	R 35.025	R 70.05

*price indicative

RS stock no.:: 687-456
Mfr. Part No.:: AG086FGD3HRBTL
Manufacturer:: ROHM

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	ROHM
	Channel Type	Type N
	Product Type	Single MOSFETs
	Maximum Continuous Drain Current Id	80A
	Maximum Drain Source Voltage Vds	40V
	Series	AG086FGD3HRB
	Package Type	TO-252 (TL)
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	4.1mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	28nC
	Maximum Power Dissipation Pd	76W
	Maximum Gate Source Voltage Vgs	±20 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Width	6.80 mm
	Standards/Approvals	RoHS, AEC-Q101
	Length	10.50mm
	Height	2.3mm
	Automotive Standard	AEC-Q101

	Select all
	Brand ROHM
	Channel Type Type N
	Product Type Single MOSFETs
	Maximum Continuous Drain Current Id 80A
	Maximum Drain Source Voltage Vds 40V
	Series AG086FGD3HRB
	Package Type TO-252 (TL)
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 4.1mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 28nC
	Maximum Power Dissipation Pd 76W
	Maximum Gate Source Voltage Vgs ±20 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Width 6.80 mm
	Standards/Approvals RoHS, AEC-Q101
	Length 10.50mm
	Height 2.3mm
	Automotive Standard AEC-Q101

Datasheet - AG086FGD3HRBTL

The ROHM Power MOSFET is engineered for high-performance applications, featuring a robust construction that ensures reliability and efficiency. With a maximum drain-source voltage of 40V and capable of handling continuous currents up to 80A, this device is an optimal solution for automotive systems and other demanding environments. Its low on-resistance of just 4.1mΩ facilitates minimal power loss during operation, making it particularly beneficial for power management tasks. Fully AEC-Q101 qualified, this MOSFET meets stringent automotive standards, ensuring consistent quality for demanding applications. The product supports efficient heat dissipation, allowing for a maximum power dissipation of 76W while maintaining a wide operational temperature range.

Low on resistance of 4.1mΩ enhances energy efficiency

AEC Q101 qualification assures automotive-grade reliability

Maximum continuous drain current of 80A caters to high load applications

Pulsed drain current capability reaches 160A for transient load handling

Supports gate-source voltage of ±20V for flexible control

Avalanche rated for increased operational safety

Thermal resistance specification aids in efficient heat management

ROHM AG086FGD3HRB Type N-Channel Single MOSFETs, 80 A, 40 V Enhancement, 3-Pin TO-252 (TL) AG086FGD3HRBTL

FREE delivery for orders over R 1,500.00

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