ROHM AG185FGD3HRB Type N-Channel Single MOSFETs, -40 V Enhancement, 3-Pin TO-252 (TL) AG185FGD3HRBTL

RS stock no.:: 687-438
Mfr. Part No.:: AG185FGD3HRBTL
Manufacturer:: ROHM

ROHM AG185FGD3HRB Type N-Channel Single MOSFETs, -40 V Enhancement, 3-Pin TO-252 (TL) AG185FGD3HRBTL

Bulk discount available

Subtotal (1 tape of 2 units)*

R 54,15

(exc. VAT)

R 62,272

(inc. VAT)

FREE delivery for orders over R 1,500.00

Temporarily out of stock

Shipping from 21 January 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Tape*
2 - 18	R 27.075	R 54.15
20 - 48	R 26.40	R 52.80
50 - 198	R 25.61	R 51.22
200 - 998	R 24.585	R 49.17
1000 +	R 23.60	R 47.20

*price indicative

RS stock no.:: 687-438
Mfr. Part No.:: AG185FGD3HRBTL
Manufacturer:: ROHM

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	ROHM
	Channel Type	Type N
	Product Type	Single MOSFETs
	Maximum Drain Source Voltage Vds	-40V
	Series	AG185FGD3HRB
	Package Type	TO-252 (TL)
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	3.2mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	96W
	Maximum Gate Source Voltage Vgs	±20 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	42nC
	Maximum Operating Temperature	175°C
	Length	10.50mm
	Standards/Approvals	AEC-Q101, RoHS
	Width	6.80 mm
	Height	2.3mm
	Automotive Standard	AEC-Q101

	Select all
	Brand ROHM
	Channel Type Type N
	Product Type Single MOSFETs
	Maximum Drain Source Voltage Vds -40V
	Series AG185FGD3HRB
	Package Type TO-252 (TL)
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 3.2mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 96W
	Maximum Gate Source Voltage Vgs ±20 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 42nC
	Maximum Operating Temperature 175°C
	Length 10.50mm
	Standards/Approvals AEC-Q101, RoHS
	Width 6.80 mm
	Height 2.3mm
	Automotive Standard AEC-Q101

Datasheet - AG185FGD3HRBTL

COO (Country of Origin):: JP

The ROHM N channel power MOSFET designed for automotive applications. This device is tailored to provide efficient switching with a maximum drain-source voltage of 40V and a continuous drain current of 80A. It features a low on-resistance, ensuring minimal power loss during operation, which contributes to improved thermal management and performance in demanding environments. With a power dissipation capability of 96W, this MOSFET is suitable for various applications that require reliable and robust performance. Its Pb-free plating and RoHS compliance highlight 's commitment to environmentally friendly manufacturing. This part is AEC-Q101 qualified, ensuring it meets the stringent automotive standards for reliability and safety.

Low on resistance of 3.2mΩ maximises efficiency and reduces heat generation

Rated for a continuous drain current of 80A, suitable for robust applications

Provides a high power dissipation capability of 96W for demanding tasks

Designed for a maximum drain-source voltage of 40V ensuring versatility in applications

AEC Q101 qualified, ensuring high reliability in automotive use

Pb free plating and RoHS compliance reflect environmentally conscious production

Suitable for various automotive systems, enhancing system performance and longevity

Features a compact DPAK package for efficient space utilisation on PCB designs

ROHM AG185FGD3HRB Type N-Channel Single MOSFETs, -40 V Enhancement, 3-Pin TO-252 (TL) AG185FGD3HRBTL

FREE delivery for orders over R 1,500.00

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