ROHM AG501EGD3HRB Type P-Channel Single MOSFETs, -40 V Enhancement, 3-Pin TO-252 (TL) AG501EGD3HRBTL

RS stock no.:: 687-359
Mfr. Part No.:: AG501EGD3HRBTL
Manufacturer:: ROHM

ROHM AG501EGD3HRB Type P-Channel Single MOSFETs, -40 V Enhancement, 3-Pin TO-252 (TL) AG501EGD3HRBTL

Image representative of range

Bulk discount available

Subtotal (1 tape of 2 units)*

R 73,45

(exc. VAT)

R 84,468

(inc. VAT)

FREE delivery for orders over R 1,500.00

Temporarily out of stock

Shipping from 22 January 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Tape*
2 - 18	R 36.725	R 73.45
20 - 48	R 35.805	R 71.61
50 - 198	R 34.73	R 69.46
200 - 998	R 33.34	R 66.68
1000 +	R 32.005	R 64.01

*price indicative

RS stock no.:: 687-359
Mfr. Part No.:: AG501EGD3HRBTL
Manufacturer:: ROHM

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	ROHM
	Channel Type	Type P
	Product Type	Single MOSFETs
	Maximum Drain Source Voltage Vds	-40V
	Series	AG501EGD3HRB
	Package Type	TO-252 (TL)
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	4.9mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	145nC
	Maximum Power Dissipation Pd	142W
	Maximum Gate Source Voltage Vgs	5 V
	Maximum Operating Temperature	175°C
	Standards/Approvals	AEC-Q101, RoHS
	Height	2.3mm
	Length	10.50mm
	Width	6.80 mm
	Automotive Standard	AEC-Q101

	Select all
	Brand ROHM
	Channel Type Type P
	Product Type Single MOSFETs
	Maximum Drain Source Voltage Vds -40V
	Series AG501EGD3HRB
	Package Type TO-252 (TL)
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 4.9mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 145nC
	Maximum Power Dissipation Pd 142W
	Maximum Gate Source Voltage Vgs 5 V
	Maximum Operating Temperature 175°C
	Standards/Approvals AEC-Q101, RoHS
	Height 2.3mm
	Length 10.50mm
	Width 6.80 mm
	Automotive Standard AEC-Q101

Datasheet - AG501EGD3HRBTL

COO (Country of Origin):: JP

The ROHM P channel power MOSFET designed for efficient energy management in automotive systems and various applications. Featuring a maximum Drain-Source voltage of -40V and a continuous drain current capability of up to -80A, this robust device delivers exceptional reliability under demanding operating conditions. With a low on-resistance of just 4.9mΩ, it ensures minimal energy loss, contributing to improved overall system efficiency and thermal performance. This MOSFET is also AEC-Q101 qualified, highlighting its suitability for automotive applications where stringent standards must be met.

Offers low on resistance for reduced power loss and enhanced efficiency

AEC Q101 qualified, ensuring reliability for automotive and critical applications

Avalanche tested to guarantee performance under dynamic conditions

Supports a maximum power dissipation of 142W, compatible with high-performance designs

Wide operating temperature range from -55°C to 175°C, allowing use in diverse environments

Pb free plating and RoHS compliant, meeting modern environmental standards

Optimised packaging specifications, including embedding options for automated assembly

Provides a guaranteed avalanche energy rating, ensuring robust operation during transient events

ROHM AG501EGD3HRB Type P-Channel Single MOSFETs, -40 V Enhancement, 3-Pin TO-252 (TL) AG501EGD3HRBTL

FREE delivery for orders over R 1,500.00

Related links