ROHM AG194FPD3HRB Type N-Channel Single MOSFETs, 100 V Enhancement, 3-Pin TO-252 (TL) AG194FPD3HRBTL

RS stock no.:: 687-353
Mfr. Part No.:: AG194FPD3HRBTL
Manufacturer:: ROHM

ROHM AG194FPD3HRB Type N-Channel Single MOSFETs, 100 V Enhancement, 3-Pin TO-252 (TL) AG194FPD3HRBTL

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Bulk discount available

Subtotal (1 tape of 2 units)*

R 84,15

(exc. VAT)

R 96,772

(inc. VAT)

FREE delivery for orders over R 1,500.00

Temporarily out of stock

Shipping from 27 January 2026

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Units	Per unit	Per Tape*
2 - 18	R 42.075	R 84.15
20 - 98	R 41.025	R 82.05
100 - 198	R 39.795	R 79.59
200 +	R 38.205	R 76.41

*price indicative

RS stock no.:: 687-353
Mfr. Part No.:: AG194FPD3HRBTL
Manufacturer:: ROHM

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	ROHM
	Product Type	Single MOSFETs
	Channel Type	Type N
	Maximum Drain Source Voltage Vds	100V
	Series	AG194FPD3HRB
	Package Type	TO-252 (TL)
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	6.2mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	±20 V
	Maximum Power Dissipation Pd	142W
	Typical Gate Charge Qg @ Vgs	55nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	AEC-Q101, RoHS
	Length	10.50mm
	Height	2.3mm
	Width	6.80 mm
	Automotive Standard	AEC-Q101

	Select all
	Brand ROHM
	Product Type Single MOSFETs
	Channel Type Type N
	Maximum Drain Source Voltage Vds 100V
	Series AG194FPD3HRB
	Package Type TO-252 (TL)
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 6.2mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs ±20 V
	Maximum Power Dissipation Pd 142W
	Typical Gate Charge Qg @ Vgs 55nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals AEC-Q101, RoHS
	Length 10.50mm
	Height 2.3mm
	Width 6.80 mm
	Automotive Standard AEC-Q101

Datasheet - AG194FPD3HRBTL

COO (Country of Origin):: JP

The ROHM N channel power MOSFET designed for applications requiring robust power management. Operating at a maximum of 100V and capable of handling continuous currents up to 80A, this component excels in delivering low on-resistance, thus minimising power loss in demanding automotive systems. Its Pb-free plating and compliance with RoHS standards ensure both environmental safety and reliability. Notably, the device is fully qualified under AEC-Q101, making it suitable for automotive applications where performance and resilience are critical. With a power dissipation capability of 142W and stringent avalanche testing, this MOSFET supports reliable operation in a variety of high-performance circuits.

Offers a low on resistance of 6.2mΩ for improved efficiency

Rated for continuous drain current of 80A, suitable for high-power applications

Features a breakdown voltage of 100V providing robustness against voltage spikes

AEC Q101 qualified, ensuring reliability in automotive environments

Avalanche tested, allowing for safe operation under transient conditions

Pb free and RoHS compliant, aligning with environmental standards

Ideal for automotive systems, enhancing power management capabilities

ROHM AG194FPD3HRB Type N-Channel Single MOSFETs, 100 V Enhancement, 3-Pin TO-252 (TL) AG194FPD3HRBTL

FREE delivery for orders over R 1,500.00

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