ROHM RD3L08DBLHRB Type N-Channel Single MOSFETs, 60 V Enhancement, 3-Pin TO-252 (TL) RD3L08DBLHRBTL

RS stock no.:: 687-458
Mfr. Part No.:: RD3L08DBLHRBTL
Manufacturer:: ROHM

ROHM RD3L08DBLHRB Type N-Channel Single MOSFETs, 60 V Enhancement, 3-Pin TO-252 (TL) RD3L08DBLHRBTL

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Subtotal (1 tape of 2 units)*

R 79,47

(exc. VAT)

R 91,39

(inc. VAT)

Add 40 units to get free delivery

Orders below R 1 500,00 (exc. VAT) cost R 120,00.

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Units	Per unit	Per Tape*
2 - 18	R 39.735	R 79.47
20 - 48	R 38.74	R 77.48
50 - 198	R 37.58	R 75.16
200 - 998	R 36.075	R 72.15
1000 +	R 34.63	R 69.26

*price indicative

RS stock no.:: 687-458
Mfr. Part No.:: RD3L08DBLHRBTL
Manufacturer:: ROHM

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	ROHM
	Product Type	Single MOSFETs
	Channel Type	Type N
	Maximum Drain Source Voltage Vds	60V
	Package Type	TO-252 (TL)
	Series	RD3L08DBLHRB
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	7.6mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	76W
	Typical Gate Charge Qg @ Vgs	22nC
	Maximum Gate Source Voltage Vgs	±20 V
	Maximum Operating Temperature	175°C
	Width	6.8 mm
	Standards/Approvals	RoHS, AEC-Q101
	Height	2.3mm
	Length	10.50mm
	Automotive Standard	AEC-Q101

	Select all
	Brand ROHM
	Product Type Single MOSFETs
	Channel Type Type N
	Maximum Drain Source Voltage Vds 60V
	Package Type TO-252 (TL)
	Series RD3L08DBLHRB
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 7.6mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 76W
	Typical Gate Charge Qg @ Vgs 22nC
	Maximum Gate Source Voltage Vgs ±20 V
	Maximum Operating Temperature 175°C
	Width 6.8 mm
	Standards/Approvals RoHS, AEC-Q101
	Height 2.3mm
	Length 10.50mm
	Automotive Standard AEC-Q101

Datasheet - RD3L08DBLHRBTL

The ROHM Power MOSFET is engineered for demanding applications requiring high efficiency and robust performance. This 60V, 80A N channel MOSFET features ultra-low on-resistance, delivering superior electrical performance while ensuring reliability. It is designed to operate optimally in various environments, making it ideal for automotive applications, including advanced driver assistance systems (ADAS) and lighting. With compliance to AEC-Q101 and 100% avalanche testing, this component ensures high standards of safety and efficiency in any electronic design. Its compact packaging enables easy integration into space-constrained layouts.

Delivers low on resistance of 7.6mΩ, enhancing efficiency in power transfer

Rated for a maximum continuous drain current of 80A, ensuring reliability under significant loads

Features a wide drain-source voltage of 60V suitable for various high-voltage applications

All products are RoHS compliant, supporting environmentally friendly designs

100% avalanche tested for increased reliability and component longevity

Designed in a DPAK TO-252 package for easy mounting in compact circuits

Offers a broad operating temperature range from -55°C to 175°C, ensuring performance in extreme conditions

Qualified to AEC Q101 , making it ideal for automotive and high-reliability applications

ROHM RD3L08DBLHRB Type N-Channel Single MOSFETs, 60 V Enhancement, 3-Pin TO-252 (TL) RD3L08DBLHRBTL

Add 40 units to get free delivery

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