ROHM AG091FLD3HRB Type N-Channel Single MOSFETs, 60 V Enhancement, 3-Pin TO-252 (TL) AG091FLD3HRBTL

RS stock no.:: 687-462
Mfr. Part No.:: AG091FLD3HRBTL
Manufacturer:: ROHM

ROHM AG091FLD3HRB Type N-Channel Single MOSFETs, 60 V Enhancement, 3-Pin TO-252 (TL) AG091FLD3HRBTL

Image representative of range

Bulk discount available

Subtotal (1 tape of 2 units)*

R 44,38

(exc. VAT)

R 51,04

(inc. VAT)

FREE delivery for orders over R 1,500.00

Temporarily out of stock

Shipping from 26 January 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Tape*
2 - 18	R 22.19	R 44.38
20 - 48	R 21.635	R 43.27
50 - 198	R 20.985	R 41.97
200 - 998	R 20.145	R 40.29
1000 +	R 19.34	R 38.68

*price indicative

RS stock no.:: 687-462
Mfr. Part No.:: AG091FLD3HRBTL
Manufacturer:: ROHM

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	ROHM
	Product Type	Single MOSFETs
	Channel Type	Type N
	Maximum Drain Source Voltage Vds	60V
	Package Type	TO-252 (TL)
	Series	AG091FLD3HRB
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	7.5mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	22nC
	Maximum Power Dissipation Pd	76W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Width	6.80 mm
	Height	2.3mm
	Length	10.50mm
	Standards/Approvals	AEC-Q101, RoHS
	Automotive Standard	AEC-Q101

	Select all
	Brand ROHM
	Product Type Single MOSFETs
	Channel Type Type N
	Maximum Drain Source Voltage Vds 60V
	Package Type TO-252 (TL)
	Series AG091FLD3HRB
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 7.5mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 22nC
	Maximum Power Dissipation Pd 76W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Width 6.80 mm
	Height 2.3mm
	Length 10.50mm
	Standards/Approvals AEC-Q101, RoHS
	Automotive Standard AEC-Q101

Datasheet - AG091FLD3HRBTL

COO (Country of Origin):: JP

The ROHM N channel Power MOSFET designed for automotive applications, providing exceptional efficiency and reliability. With a maximum drain-source voltage of 60V and a continuous drain current capacity of 80A, this MOSFET ensures optimal performance in demanding environments. Its low on-resistance of 7.5mΩ significantly reduces power losses, making it suitable for various automotive systems and high-current applications. The device is RoHS compliant with Pb-free plating, ensuring environmental safety while maintaining robust performance under stringent conditions.

Low on resistance for improved efficiency and reduced heat generation

AEC Q101 qualified, ensuring high reliability in automotive applications

100% avalanche tested for enhanced safety and durability

Wide operating junction temperature range from -55 to +175 °C for versatile use

Robust power dissipation capacity of 76W to handle significant loads

Tape packaging facilitates ease of handling and assembly in manufacturing environments

Embossed packaging specifications ensure secure dynamics during transport

ROHM AG091FLD3HRB Type N-Channel Single MOSFETs, 60 V Enhancement, 3-Pin TO-252 (TL) AG091FLD3HRBTL

FREE delivery for orders over R 1,500.00

Related links