ROHM RD3P08BBLHRB Type P-Channel Single MOSFETs, 100 V Enhancement, 3-Pin TO-252 (TL) RD3P08BBLHRBTL

RS stock no.:: 687-355
Mfr. Part No.:: RD3P08BBLHRBTL
Manufacturer:: ROHM

ROHM RD3P08BBLHRB Type P-Channel Single MOSFETs, 100 V Enhancement, 3-Pin TO-252 (TL) RD3P08BBLHRBTL

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Subtotal (1 tape of 2 units)*

R 129,23

(exc. VAT)

R 148,614

(inc. VAT)

Add 24 units to get free delivery

Orders below R 1 500,00 (exc. VAT) cost R 120,00.

In Stock

100 unit(s) ready to ship from another location

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Units	Per unit	Per Tape*
2 - 18	R 64.615	R 129.23
20 - 98	R 63.00	R 126.00
100 - 198	R 61.11	R 122.22
200 +	R 58.665	R 117.33

*price indicative

RS stock no.:: 687-355
Mfr. Part No.:: RD3P08BBLHRBTL
Manufacturer:: ROHM

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	ROHM
	Product Type	Single MOSFETs
	Channel Type	Type P
	Maximum Drain Source Voltage Vds	100V
	Series	RD3P08BBLHRB
	Package Type	TO-252 (TL)
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	6.2mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	142W
	Maximum Gate Source Voltage Vgs	±20 V
	Typical Gate Charge Qg @ Vgs	55nC
	Maximum Operating Temperature	175°C
	Height	2.3mm
	Width	6.8 mm
	Standards/Approvals	AEC-Q101, RoHS
	Length	10.50mm
	Automotive Standard	AEC-Q101

	Select all
	Brand ROHM
	Product Type Single MOSFETs
	Channel Type Type P
	Maximum Drain Source Voltage Vds 100V
	Series RD3P08BBLHRB
	Package Type TO-252 (TL)
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 6.2mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 142W
	Maximum Gate Source Voltage Vgs ±20 V
	Typical Gate Charge Qg @ Vgs 55nC
	Maximum Operating Temperature 175°C
	Height 2.3mm
	Width 6.8 mm
	Standards/Approvals AEC-Q101, RoHS
	Length 10.50mm
	Automotive Standard AEC-Q101

Datasheet - RD3P08BBLHRBTL

The ROHM N channel power MOSFET designed for robust applications requiring efficient switching. With a maximum voltage rating of 100V and a continuous drain current of 80A, this component delivers reliable power management. Its low on-resistance of just 6.2mΩ ensures minimal energy loss during operation, which is critical for enhancing the efficiency of power supplies. Supporting a wide range of commutated current applications, this MOSFET is AEC-Q101 qualified, making it suitable for automotive environments. Its compact DPAK package allows for improved thermal performance in confined spaces.

Low on resistance enhances energy efficiency, reducing heat generation

100V drain-source voltage rating supports diverse high-voltage applications

Continuous drain current of 80A allows for dependable performance under heavy loads

AEC Q101 qualified, assuring high reliability for automotive applications

Compact TO-252 package facilitates better thermal management and space-saving designs

Robust avalanche capability ensures safety during transient conditions

High power dissipation of 142W accommodates demanding operational needs

Pb free plating and RoHS compliant, aligning with environmentally friendly practices

ROHM RD3P08BBLHRB Type P-Channel Single MOSFETs, 100 V Enhancement, 3-Pin TO-252 (TL) RD3P08BBLHRBTL

Add 24 units to get free delivery

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