IXYS HiperFET, Polar Type N-Channel MOSFET, 72 A, 600 V Enhancement, 4-Pin SOT-227 IXFN82N60P

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R 856,97

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R 985,52

(inc. VAT)

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  • 83 unit(s) ready to ship from another location
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Units
Per unit
1 - 4R 856.97
5 - 24R 835.55
25 - 99R 810.48
100 +R 778.06

*price indicative

RS stock no.:
194-130
Mfr. Part No.:
IXFN82N60P
Manufacturer:
IXYS
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Brand

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

72A

Maximum Drain Source Voltage Vds

600V

Package Type

SOT-227

Series

HiperFET, Polar

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

75mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

240nC

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

1.04kW

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.5V

Maximum Operating Temperature

150°C

Height

9.6mm

Length

38.2mm

Width

25.07 mm

Standards/Approvals

No

Automotive Standard

No

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